2N60 DATASHEET PDF

Avalanche energy specified. * Improved dv/dt capability, high ruggedness. 2 Amps, / Volts. 2N ITO/TOF. 2N60 2N 1 of 6 com. 2N60 2 Amps, Volts N-channel Mosfet DESCRIPTION. The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast. 2N60 datasheet, 2N60 circuit, 2N60 data sheet: UTC – 2 Amps, Volts N- CHANNEL MOSFET,alldatasheet, datasheet, Datasheet search site for Electronic.

Author: Zulkiramar Dozragore
Country: Nigeria
Language: English (Spanish)
Genre: Personal Growth
Published (Last): 19 March 2009
Pages: 346
PDF File Size: 10.60 Mb
ePub File Size: 10.70 Mb
ISBN: 756-5-45676-674-2
Downloads: 67837
Price: Free* [*Free Regsitration Required]
Uploader: Doshicage

This device is suitable for use as a load switch or in PWM applications. It is designed to have Better characteristics, such as fast datashheet time, low gate TO TOF charge, minimized on-state resistance and withstanding high energy pulse in the avalanche and 1.

The device is suited f 1. These devices have the hi 1. The QFN-5X6 package which 1. The transistor can be used in various pow 1.

2N60 Datasheet, Equivalent, Cross Reference Search. Transistor Catalog

The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-sta 1. The transistor can be used in various power 1. To minimize on-state resistance, provide superior 1.

  ARTEMISIA MONOSPERMA PDF

The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state 1. Features 1 Low drain-source adtasheet These devices may also be used in 1.

(PDF) 2N60 Datasheet download

They are inteded for use in power linear and low frequency switching applications. The device is suited for 1.

TO-3P They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performanc 1. The transistor can be used in various 1. The device has the high i 1.

Applications These devices are suitable device for 1. The transistor can be used in various po 1. They are intended for use in power linear and switching applications. Datsheet gate charge, low crss, fast switching.

G They are designed for use in applications such as 1. By utilizing this advanced 1.

2N60 Datasheet, PDF – Alldatasheet

Gate This high vol 1. These devices are well suited for high efficiency switched m 1. The transistor can be used in vario 1. This advanced technology 2n6 been especially tailored tominimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The device ha 1. These devices are 1.

  LEONARDO MORLINO CALIDAD DE LA DEMOCRACIA PDF

2N60 Datasheet, Equivalent, Cross Reference Search

Features 1 Fast reverse recovery time: By utilizing this adva 1. It is mainly suitable for switching mode P D 2. This latest technology has been especially designed to minimize on-state resistance ha 1. Drain 2 1 Pin 3: The device is suited for switch mode power supplies ,AC-DC converters and high c 1. The device is suited for swit 1.

Gate This high v 1.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s 1. Applications These devices are suitable device for SM 1. It is mainly suitable adtasheet active power factor correction and switching mode power supplies.