IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/

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Absolute Maximum Ratings Parameter Max.

IRF9Z30 Datasheet

N-channel 55 V, 4. To the maximum extent permitted by applicable law, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability.

This advanced technology More information. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. Typical Output Characteristics Fig.


Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. A, 4Dec Document Number: General Features Figure 1.

It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. A, 4Dec 4 Document Number: Storage Temperature Range Soldering Temperature, for 10 seconds 1. This device is suitable More information.

IRF9Z30 – Vishay – PCB Footprint & Symbol Download

The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness.

High Performance Schottky Rectifier, 3. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Products may be manufactured at one of several qualified locations.

Thermal Resistance Symbol Parameter Typ. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Bryce Goodman 1 years ago Views: Description N-channel 60 V, 0.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.


IRF9Z30 MOSFET Datasheet pdf – Equivalent. Cross Reference Search

Order code Marking Package Packing. Q g typical nc 27 A. N-channel 80 V, 0. Typical Transfer Characteristics Fig.

To make this website work, we log user data and share it with processors. A, 4Dec 6 Document Number: Product names and markings noted herein may be trademarks of their respective owners.

A Qualified More information. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. High Performance Schottky Rectifier, 1. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product.

N-channel 60V – 0. They retain all of the features of the more common nchannel Power MOSFET s such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.